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| savantic semiconductor product specification silicon npn power transistors BU2527DF d escription with to-3pfa package high voltage high speed switching built-in damper diode applications for use in horizontal deflection circuits of high resolution monitors pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7.5 v i c collector current (dc) 12 a i cm collector current -peak 30 a i b base current (dc) 8 a i bm base current -peak 12 a p tot total power dissipation t c =25 45 w t j max.operating junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors BU2527DF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 800 v v (br)ebo emitter-base breakdown voltage i e =600ma ;i c =0 7.5 13.5 v v cesat collector-emitter saturation voltage i c =8a ;i b =1.6a 5.0 v v besat base-emitter saturation voltage i c =8a ;i b =1.6a 1.1 v i ces collector cut-off current v ce =bv ces; v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =6v; i c =0 110 ma h fe-1 dc current gain i c =1a ; v ce =5v 11 h fe-2 dc current gain i c =8a ; v ce =5v 5 10 c c collector capacitance i e =0 ; v cb =10v; f=1mhz 145 pf v f diode forward voltage i f =8a 2.0 v savantic semiconductor product specification 3 silicon npn power transistors BU2527DF package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm) |
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